q?v~zy??q?v?_rb]{??qcabgq HRLF55N03K HRLF55N03K 30v n-channel trench mosfet jan 2016 8dfn 5x6 1 features absolute maximum ratings t j =25 e unless otherwise specified ? bv dss = 30 v ? i d = 65 a ? unrivalled gate charge : 50 nc (typ.) ? lower r ds(on) : 4.2 p
(typ.) @v gs =10v ? lower r ds(on) : 7.5 p
(typ.) @v gs =4.5v ? 100% avalanche tested symbol parameter value units v dss drain-source voltage 30 v v gs gate-source voltage 20 v i d drain current t c = 25 e 65 a t c = 100 e 41 a i dm pulsed drain current (note 1) 195 a e as single pulsed avalanche energy (note 2) 300 mj p d power dissipation t c = 25 e 33 w t a = 25 e 2.0 w t j , t stg operating and storage temperature range -55 to +150 e thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 3.8 e /w r ja junction-to-ambient (steady state) -- 62 e /w
q?v~zy??q?v?_rb]{??qcabgq HRLF55N03K electrical characteristics t j =25 q c unless otherwise specified symbol parameter test conditions min typ max units on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 30 -- -- v i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v -- -- 1 3 v ds = 24 v, t j = 125 e -- -- 100 3 i gss gate-body leakage current v gs = 20 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz -- 2050 -- ? c oss output capacitance -- 315 -- ? c rss reverse transfer capacitance -- 240 -- ? r g gate resistance v gs = 0 v, v ds = 0 v, f = 1mhz -- 1 -- ? dynamic characteristics v gs gate threshold voltage v ds = v gs , i d = 250 3 1.0 -- 2.4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 20 a -- 4.2 5.5 m ? v gs = 4.5 v, i d = 15 a -- 7.5 9.0 m ? g fs forward transconductance v ds = 5, i d = 20 a -- 30 -- s i s continuous source-drain diode forward current -- -- 65 a i sm pulsed source-drain diode forward current -- -- 195 v sd source-drain diode forward voltage i s = 20 a, v gs = 0 v -- -- 1.3 v trr reverse recovery time i s = 20 a, v gs = 0 v di f /dt = 55 a/ v -- 20 -- qrr reverse recovery charge -- 10 -- nc source-drain diode maximum ratings and characteristics notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=1mh, i as =10a, v dd =25v, r g =25 : , starting t j =25 q c t d(on) turn-on time v ds = 15 v, i d = 20 a, r g = 6 ? -- 15 -- t r turn-on rise time -- 20 -- t d(off) turn-off delay time -- 65 -- t f turn-off fall time -- 70 -- q g (10v) total gate charge v ds = 24 v, i d = 20 a, v gs = 10 v -- 50 -- nc q g (4.5v) total gate charge -- 26 -- nc q gs gate-source charge -- 8 -- nc q gd gate-drain charge -- 8 -- nc switching characteristics
q?v~zy??q?v?_rb]{??qcabgq HRLF55N03K typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 0 102030405060 0 2 4 6 8 10 12 v ds = 24v i d = 20a v gs , gate-source voltage [v] q g , total gate charge [nc] 0 40 80 120 160 200 240 0 2 4 6 8 10 12 14 16 v gs = 4.5v
note : t j = 25 o c r ds(on) [m : ], drain-source on-resistance i d , drain current [a] v gs = 10v 0.0 0.4 0.8 1.2 1.6 0.1 1 10 100 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 125 o c 012345 0 50 100 150 200 v gs top : 10 v 8 v 7 v 6 v 5 v 4 v 3.5 v 3.0 v bottom : 2.5 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 0123456 0 50 100 150 200 t j =25 o c * notes : 1. v ds = 5v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 0 5 10 15 20 25 30 0 500 1000 1500 2000 2500 3000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v]
q?v~zy??q?v?_rb]{??qcabgq HRLF55N03K typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve t 2 t 1 p dm 25 50 75 100 125 150 0 10 20 30 40 50 60 70 i d , drain current [a] t c , case temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0
note : 1. v gs = 10 v 2. i d = 20 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 * notes : 1. r t jc = 3.8 o c/w max. 2. duty factor, d=t 1 /t 2 3. t j,pk = p dm x z t jc x r t jc + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] 10 -2 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 us 10 ms dc 1 ms 100 us operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v]
q?v~zy??q?v?_rb]{??qcabgq HRLF55N03K fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_rb]{??qcabgq HRLF55N03K fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_rb]{??qcabgq HRLF55N03K package dimension _ k m u g \ ? ] g
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